Figura 1/ Figure 1
Índices de absorção (κ) do alumínio (Al)(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767. e da alumina (Al2O3)(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645. em função do comprimento de onda
(λ). Absorption index (κ) of aluminum (Al)(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767. and alumina (Al2O3)(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645. as a function of the wavelength
(λ).
Figura 2/ Figure 2
Variação da parte real (∈1) e imaginária (∈2) da
constante dielétrica (∈) em função da frequência de onda aplicada (Hz)
destacando os tipos de polarização que ocorrem em cada faixa de frequência e
a classe de onda a que correspondem(18)18 M. W. Barsoum, "Fundamentals of ceramics", 2nd ed., IOP, Philadelphia,
EUA (1997) 465-581. [RW (ondas de rádio), MW (micro-ondas), IR (infravermelho),
V (visível) e UV (ultravioleta)]. Variation of the real part (∈1)
and the imaginary one (∈2) of the dielectric constant (∈) as a
function of the applied wave frequency (Hz), highlighting the types of
polarization occurring for each frequency range and the corresponding wave
class(18)18 M. W. Barsoum, "Fundamentals of ceramics", 2nd ed., IOP, Philadelphia,
EUA (1997) 465-581. [RW (radio waves),
MW(microwave), IR (infrared), V(visible) and UV(ultraviolet)].
Figura 3/ Figure 3
Comportamento da parte real da constante dielétrica (∈
1) para
a polarização eletrônica (α
e) calculada pela
equação L, adotando-se f = 0,1
rad/s, Z
i= 6, N= 1 mol/m
3 = 6,02.10
23
espécies/m
3 e ω
0 = 10.10
14 Hz em função
da frequência do campo aplicado (ω). Behavior of the real part of dielectric
constant (∈
1) for the electronic polarization (α
e)
calculated by
equation L,
assuming f= 0.1 rad/s, Z
i = 6, N= 1 mol/m
3 =
6.02.10
23 species/m
3 and ω
0 =
10.10
14 Hz as a function of the applied field frequency
(ω).
Figura 4/ Figure 4
Comportamento da parte imaginária da constante dielétrica
(∈
2) para a polarização eletrônica (α
e) calculada pela
equação M, adotando-se f=
0,1 rad/s, Z
i= 6, N= 1 mol/m
3=6,02.10
23
espécies/m
3 e ω
0 = 10,10
14 Hz em função
da frequência do campo aplicado (ω). Behavior of the imaginary part of
dielectric constant (∈
2) for the electronic polarization
(α
e) calculated by
equation M, adopting f= 0.1 rad/s, Z
i= 6, N= 1
mol/m
3 = 6.02.10
23 species/m
3 and
ω
0 = 10.10
14 Hz as a function of the applied field
frequency (ω).
Figura 5/ Figure 5
Comportamento do índice de refração (n) e absorção (k) para a
polarização eletrônica (α
e) calculados respectivamente pelas
equações I e
J, adotando-se f= 0,1 rad/s,
Z
i = 6, N= 1 mol/m
3 = 6,02.10
23
espécies/m
3 e ω
0 = 10.10
14 Hz para o
cálculo da parte real (∈
1) e imaginária (∈
2) da
constante dielétrica (∈) e em função da frequência do campo aplicado (ω).
Behavior of the refractive index (n) and absorption index (k) for the
electronic polarization (α
e) calculated by
equations I and
J, respectively, assuming f= 0.1
rad/s, Z
i = 6, N= 1 mol/m
3 = 6.02.10
23
species/m
3 and ω
0 = 10.10
14 Hz for
calculating the real (∈
1) and imaginary (∈
2) parts of
dielectric constant as a function of the applied field frequency
(ω).
Figura 6/ Figure 6
Polarizabilidade eletrônica (αe) de íons em função do seu
raio elevado a terceira potência (r3
0)(18). Electronic polarizability (αe) of
selected ions as a function of their radii to the third power (r3
0)(18).
Figura 7/ Figure 7
Índice de refração (n)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(20)20 Tropf, W. J.; Thomas, M. E.; Hopkins, J., Infrared refractive index and
thermo-optic coefficient measurement at APL, Apl. Technical Digest 19 (1998)
293-298. em função do
comprimento de onda (λ) para os materiais abordados ao longo do artigo.
Refractive index (n)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(20)20 Tropf, W. J.; Thomas, M. E.; Hopkins, J., Infrared refractive index and
thermo-optic coefficient measurement at APL, Apl. Technical Digest 19 (1998)
293-298. as a function
of the wavelength (λ) for the materials presented in the paper.
Figura 8/ Figure 8
Porcentagem de reflexão para uma radiação de 5 μm não polarizada (R) e
suas componentes polarizadas perpendicularmente (ρ
L) e
paralelamente (ρ
II) ao plano de incidência, para o sistema
ar-alumínio (Al) e o ar-alumina (Al
2O
3), calculados
pelas equações de
S a
X com base nos seus respectivos
índices de refração (n)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(20)20 Tropf, W. J.; Thomas, M. E.; Hopkins, J., Infrared refractive index and
thermo-optic coefficient measurement at APL, Apl. Technical Digest 19 (1998)
293-298. e absorção
(k)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.. Percentage of reflection (R) for anon-polarized
5μm radiationand its perpendicular (ρ
L) and parallel
(ρ
II) polarized components to the plane of incidence for the
air-aluminum system (Al) and the air-alumina one
(Al
2O
3), calculated by equations
S-
X with their respective refractive (n)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(20)20 Tropf, W. J.; Thomas, M. E.; Hopkins, J., Infrared refractive index and
thermo-optic coefficient measurement at APL, Apl. Technical Digest 19 (1998)
293-298. and absorption indexes (k)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645..
Figura 9/ Figure 9
Espectro de Planck da potência emissiva (W) em função da temperatura e
do comprimento de onda (λ)(21)21 D. O. Vivaldini, A. A. C. Mour'ao, V. R. Salvini, V. C. Pandolfelli,
Revisão: Fundamentos e materiais para o projeto da microestrutura de isolantes
térmicos refratários de alto desempenho, Cerâmica 60, 354 (2014)
297-307..
Planck's spectrum of emissive power (W) as a function of temperature and
wavelength (λ)(21)21 D. O. Vivaldini, A. A. C. Mour'ao, V. R. Salvini, V. C. Pandolfelli,
Revisão: Fundamentos e materiais para o projeto da microestrutura de isolantes
térmicos refratários de alto desempenho, Cerâmica 60, 354 (2014)
297-307..
Figura 10/ Figure 10
Diagrama de fases ternário indicativo das porcentagens utilizadas de
cada um dos compostos que constituem a terceira geração de tintas de alta
emissividade da NASA. A área marcada como A representa a faixa de
composições com resultados satisfatórios e aquela demarcada como B consiste
nos melhores resultados obtidos(3)3 D. A. Stewart, D. B. Leiser, R. R. DiFiori, V. W. Katwala, "High
efficiency tantalum-based ceramic composite structure", Patente US 7,767,305B1, 03
(10/ 2010)..
Ternary phase diagram with the percentages of each compound used for the
third generation of NASA high emissivity coating. The area highlighted with
A represents the group of compositions with suitable results, and the Bone,
the best results attained(3)3 D. A. Stewart, D. B. Leiser, R. R. DiFiori, V. W. Katwala, "High
efficiency tantalum-based ceramic composite structure", Patente US 7,767,305B1, 03
(10/ 2010)..
Figura 11/ Figure 11
Emissividade da primeira (SiC+ borossilicato)(2)2 D. A. Kourtides, R. A. Churchward, D. A. Lowe, "Protective coating for
ceramic materials", Patente US 5,296,288 (22 March 1994). e terceira (MoSi2 +TaSi2 +
borossilicato)(3)3 D. A. Stewart, D. B. Leiser, R. R. DiFiori, V. W. Katwala, "High
efficiency tantalum-based ceramic composite structure", Patente US 7,767,305B1, 03
(10/ 2010). gerações de
tintas de alta emissividade da NASA em função da temperatura (T). Emissivity
of first (SiC+ borosilicate)(2)2 D. A. Kourtides, R. A. Churchward, D. A. Lowe, "Protective coating for
ceramic materials", Patente US 5,296,288 (22 March 1994). and
third(MoSi2 + TaSi2+ borosilicate)(3)3 D. A. Stewart, D. B. Leiser, R. R. DiFiori, V. W. Katwala, "High
efficiency tantalum-based ceramic composite structure", Patente US 7,767,305B1, 03
(10/ 2010). generations of NASA's high emissivity
coatings as a function of the temperature (T).
Figura 12/ Figure 12
Emissividade da terceira geração de tintas de alta emissividade da NASA
em função do comprimento de onda (λ), onde C e D representam respectivamente
a tinta antes e depois de tratada termicamente com plasma(3)3 D. A. Stewart, D. B. Leiser, R. R. DiFiori, V. W. Katwala, "High
efficiency tantalum-based ceramic composite structure", Patente US 7,767,305B1, 03
(10/ 2010).. Emissivity of the third generation
of NASA's high emissivity coating as a function of wavelength (λ), where C
and D represent the coating before and after plasma heat treatment,
respectively(3)3 D. A. Stewart, D. B. Leiser, R. R. DiFiori, V. W. Katwala, "High
efficiency tantalum-based ceramic composite structure", Patente US 7,767,305B1, 03
(10/ 2010)..
Figura 13/ Figure 13
Estimativa da polarizabilidade eletrônica (αe) para as
espécies iônicas (cátions e ânions) que formam os compostos cerâmicos
carbeto de silício (Si4+ e C4-), alumina
(Al3+ e O2-) e zircônia parcialmente estabilizada
com ítria (PSZ) (ZR4+,O2- e Y3+), calculada
por meio da equação O, com base nos seus respectivos raios iônicos
(r0)(27)27 P. Atkins, L. Jones, "Princípios de química: questionando a vida moderna
e o meio ambiente", 3ª. ed., Porto Alegre, RS, Bookman (2006)
840-849. e adotando-se
a permissividade elétrica do vácuo (ε0) igual a
8,854.10-12 C2/J.m. Estimated values of the
electronic polarizability (αe) of ionic species(cations and
anions) for the ceramic compounds silicon carbide (Si4+ and
C4-), alumina (Al3+ and O2-) and
partially stabilized zirconia with yttria (PSZ) (ZR4+,
O2- and Y3+), calculated by using equation 15,
based on the ionic radii (r0)(27)27 P. Atkins, L. Jones, "Princípios de química: questionando a vida moderna
e o meio ambiente", 3ª. ed., Porto Alegre, RS, Bookman (2006)
840-849. and assuming the electric permittivity of vacuum
(ε0) equal to 8.854.10-12
C2/J.m.
Figura 14/ Figure 14
Índices de absorção (k) da alumina (Al2O3)(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645., da zircônia parcialmente
estabilizada com ítria (PSZ)(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645., e
do carbeto de silício (SiC)(28)28 G. B. Dubrovskii, E. I. Radovanova, Infrared impurity absorption in
n-type silicon carbide, Phys. Status Solidi B 48 (1971) 875-879.,
obtido pela equação C, em função do comprimento de onda (λ). Absorption
index (k) of alumina (Al2O3)(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645., zirconia partially stabilized with yttria
(PSZ)(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645., and silicon carbide
(SiC)(28)28 G. B. Dubrovskii, E. I. Radovanova, Infrared impurity absorption in
n-type silicon carbide, Phys. Status Solidi B 48 (1971) 875-879., calculated by equation
C, as a function of wavelength (λ).
Figura 15/ Figure 15
Índice de absorção (k) do alumínio (Al
2O
3), dos
dissilicetos de molibdênio (MoSi
2) e tântalo
(TaSi
2)
(19)19 Sopralab, Disponivel em:
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2012.
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, e do
carbeto de silício (SiC)
(28)28 G. B. Dubrovskii, E. I. Radovanova, Infrared impurity absorption in
n-type silicon carbide, Phys. Status Solidi B 48 (1971) 875-879., obtido
pela equação C, em função do comprimento de onda (λ). Absorption index (k)
of alumina (Al
2O
3), molybdenum (MoSi
2) and
tantalum (TaSi
2)
(19)19 Sopralab, Disponivel em:
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2012.
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disilicides, and silicon carbide (SiC)
(28)28 G. B. Dubrovskii, E. I. Radovanova, Infrared impurity absorption in
n-type silicon carbide, Phys. Status Solidi B 48 (1971) 875-879., obtained by equation C, as a function of
wavelength.
Figura 16/ Figure 16
Refletividade de diversos materiais calculada pela equação X com base
nos seus respectivos índices de refração (n)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(20)20 Tropf, W. J.; Thomas, M. E.; Hopkins, J., Infrared refractive index and
thermo-optic coefficient measurement at APL, Apl. Technical Digest 19 (1998)
293-298. e absorção (k)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(28)28 G. B. Dubrovskii, E. I. Radovanova, Infrared impurity absorption in
n-type silicon carbide, Phys. Status Solidi B 48 (1971) 875-879. para
uma onda incidindo perpendicularmente à superfície. Reflectivity of various
materials calculated by equation X, based on their refractive (n)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(20)20 Tropf, W. J.; Thomas, M. E.; Hopkins, J., Infrared refractive index and
thermo-optic coefficient measurement at APL, Apl. Technical Digest 19 (1998)
293-298. and absorption (k)
(16)16 A. D. Rakic, Algorithm for the determination of intrinsic optical
constants of metal films: application to aluminum, Appl. Optics 34 (1995)
4755-4767.,
(17)17 J. Manara, M. Reidinger, S. Korder, M. Arduini-Schuster, J. Fricke,
Development and characterization of low emitting ceramics, Int. J. Thermophys. 28
(2007) 1628-1645.,
(19)19 Sopralab, Disponivel em:
<http://www.sopra-sa.com/index2.php?goto=dl&rub=4>. Acesso em: fev.
2012.
http://www.sopra-sa.com/index2.php?goto=...
,
(28)28 G. B. Dubrovskii, E. I. Radovanova, Infrared impurity absorption in
n-type silicon carbide, Phys. Status Solidi B 48 (1971) 875-879. indexes for a perpendicular
incident wave on the surface.
Figura 17/ Figure 17
Emissividade (ε) em função do comprimento de onda (λ) para o carbeto de
silício (SiC) a 1000 K e para o óxido de alumínio
(Al2O3) a 1400 K(29)29 Y. A. Cengel, "Heat transfer: a practical approach", 2ª. ed.,
Mcgraw-Hill (2002) 580-581.. Emissivity (ε) as a function of wavelength for silicon
carbide (SiC) at 1000 K and for alumina (Al2O3) at
1400 K(29)29 Y. A. Cengel, "Heat transfer: a practical approach", 2ª. ed.,
Mcgraw-Hill (2002) 580-581..
Figura 18/ Figure 18
Comportamento do coeficiente de absorção (βa) do carbeto de
silício hexagonal (6H-SiC) em função da temperatura (T), para os
comprimentos de onda 1,49 μm, 2,00 μm, 2,25 μm, 3,03 μm e 3,52 μm, indicados
respectivamente pelas letras de A a E(30)30 R. Groth, E. Kauer, Absorption freier ladungsträger in α-SiC-kristallen,
Physica Status Solidi B 1 (1961) 445-450.. Absorption coefficient (βa) profile of hexagonal
silicon carbide (6H-SiC) as a function of temperature (T), for the
wavelengths 1.49 μm, 2.00 μm, 2.25 μm, 3.03 μm and 3.52 μm, shown by the
letters A to E, respectively(30)30 R. Groth, E. Kauer, Absorption freier ladungsträger in α-SiC-kristallen,
Physica Status Solidi B 1 (1961) 445-450..