Figure 1
Transmission line model of CNT with distributed elements.
Figure 2
Conductivity for SWCNT and MWNT nanotubes as a function of length (Wong and Akinwande, 2011Wong, H.S.P. and Akinwande, D., 2011, "Carbon Nanotube and Graphene Device Physics", Cambrigde University Press, Cambrigde, UK. 262p.).
Figure 3
Examples of rectifying p-n junction (D’yachkov, 2006D'yachkov, P.N., 2006, "Carbon Nanotubes: Structure, Properties and Applications", BINOM, Moscow, Russia.).
Figure 4
Sample image junction obtained by atomic force microscope (
Yao et al., 1999Yao, Z., Postma, H.W.C., Balents, L., and Dekker, C., 1999, "Carbon Nanotube Intramolecular Junctions", Nature, Vol. 402, pp. 273-276. doi:10.1038/46241
https://doi.org/10.1038/46241...
): (a) CNT placed directly on 3 electrodes, (b) CNT folded that presents the effect of rectification, (c) the detail of the fold, in which, on one side of the fold, the CNT is metallic and, on the other one, it is semiconductor.
Figure 5
Current-voltage characteristic of metal-semiconductor junction in
Fig. 4a.
Figure 6
(a) Schottky diode’s schematic representation, (b) typical image obtained by atomic force microscope (Manohara et al., 2005Manohara, H.M., Wong, E.W., Schlecht, E., Hunt, B.D. and Siegel, P.H., 2005, "Carbon Nanotube Schottky Diodes Using Ti-Schottky and Pt-Ohmic Contacts for High Frequency Applications", Nano Letters, Vol. 5, No. 7, pp. 1469-1474.).
Figure 7
Current-voltage characteristics of four Schottky diodes (Manohara et al., 2005Manohara, H.M., Wong, E.W., Schlecht, E., Hunt, B.D. and Siegel, P.H., 2005, "Carbon Nanotube Schottky Diodes Using Ti-Schottky and Pt-Ohmic Contacts for High Frequency Applications", Nano Letters, Vol. 5, No. 7, pp. 1469-1474.).
Figure 8
Current-voltage curve of Schottky diode with multiple CNT (Manohara et al., 2005Manohara, H.M., Wong, E.W., Schlecht, E., Hunt, B.D. and Siegel, P.H., 2005, "Carbon Nanotube Schottky Diodes Using Ti-Schottky and Pt-Ohmic Contacts for High Frequency Applications", Nano Letters, Vol. 5, No. 7, pp. 1469-1474.).
Figure 9
Current-voltage curves of a symmetric Schottky diode with three different metals as contact (
Avouris, 2002Avouris, P., 2002, "Molecular Electronics with Carbon Nanotubes", Accounts of Chemical Research, Vol. 35, No. 12, pp. 1026-1034. doi: 10.1021/ar010152e
https://doi.org/10.1021/ar010152e...
).
Figure 10
Image of field-effect transistor with CNT obtained by atomic force microscope (Adel and Smith, 2007Adel, S. and Smith, K.C., 2007, "Microeletrônica", Fifth Ed., Prentice Hall, São Paulo, Brazil.).
Figure 11
Schematic representation of field-effect transistor with CNT with top-gate (Adel and Smith, 2007Adel, S. and Smith, K.C., 2007, "Microeletrônica", Fifth Ed., Prentice Hall, São Paulo, Brazil.).
Figure 12
Electrical output characteristics of top-gate fieldeffect transistor with CNT with source, drain and gate terminals of titanium at room temperature (Adel and Smith, 2007Adel, S. and Smith, K.C., 2007, "Microeletrônica", Fifth Ed., Prentice Hall, São Paulo, Brazil.).
Figure 13
Geometric configurations commonly used in fieldeffect transistor with CNT (Wong and Akinwande, 2011Wong, H.S.P. and Akinwande, D., 2011, "Carbon Nanotube and Graphene Device Physics", Cambrigde University Press, Cambrigde, UK. 262p.).
Table 1
The four transport regime of field-effect transistor with CNT (Wong and Akinwande, 2011Wong, H.S.P. and Akinwande, D., 2011, "Carbon Nanotube and Graphene Device Physics", Cambrigde University Press, Cambrigde, UK. 262p.).
Table 2
Difference between 2-D MOSFET and 1-D CNFET (Wong and Akinwande, 2011Wong, H.S.P. and Akinwande, D., 2011, "Carbon Nanotube and Graphene Device Physics", Cambrigde University Press, Cambrigde, UK. 262p.).
