Microstrip Patch Antenna with BiNbO4(V2O5) Substrate and Copper Periodic Structures

Miranda, Igor Ramon Sinimbú; Sousa, Fiterlinge Martins de; de Sousa, Fabio Barros; Oliveira, Jorge Everaldo de; Costa, Marcos Benedito Caldas

doi:10.1590/1980-5373-MR-2020-0487

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Article • Mat. Res. 24 (5) • 2021 • https://doi.org/10.1590/1980-5373-MR-2020-0487 copy

Microstrip Patch Antenna with BiNbO₄(V₂O₅) Substrate and Copper Periodic Structures

Authorship SCIMAGO INSTITUTIONS RANKINGS

Abstract

The use of high permittivity materials on substrates of a microstrip antenna was developed with Bismuth Niobate ceramic doped with vanadium Oxide (BiNbO₄ (V₂O₅)) and compared with an antenna of silicon dioxide substrate (SiO₂) using Ansys software HFSS and CST Studio. The ceramic antenna has -20 dB at 3.5 GHz and the silicon dioxide antenna -24.7 dB of reflection coefficient. The bandwidth values are 80 MHz for the bismuth ceramic antenna and 100 MHz for the silica antenna. The results demonstrate that the proposed BiNbO₄ antenna has great advantage compared to those mentioned in terms of volume reduction, presenting results similar to those antennas with higher volume. In addition, we use copper periodic structures (EBG) in order to increase the gain in associated with the use of BiNbO₄ with addition of V₂O₅ on the antenna substrate leading to a reduction in the total volume. Therefore, the proposed Bismuth Niobate antenna proves to be an excellent alternative for 5G technology and microwave S band (2-4 GHz) devices, highlighting the mentioned advantages.

Keywords:
Bismuth Niobate Ceramic; 5G technology; Microstrip Antenna

Parameters	Antenna 1(mm)	Antenna 2(mm)
W_gp $\times$ L_gp	$20 \times 25$	$60 \times 55$
W_p $\times$ L_p	$8.67617 \times 4.5$	$27.1052 \times 20.72$
f_i	$1.6$	$7$
g	$1$	$1.3$
W_f	$0.5$	$3$
L	$3$	$7$
a	$0.5$	$1.5$
L_e	$1.8$	$13$
h	$2.5$	$1.5$

Paper	S₁₁(Res.Freq.)	Gain(dB)	B.W.(MHz)	Per.Struc.	Material	$ε_{r}$
Zhou et al.⁹9 Zhou D, Wang H, Jiang Y, Yao X. The two element antennas using BiNbO4 ceramics as the substrate. Mater Sci Eng A. 2007;460-461:652-5.	-22.0 (3.07GHz)	-	34	-	BiNbO₄(V₂O₅)	43
Carneiro et al.¹¹11 Carneiro R Fo, Araújo JH, Ginani MF, d’Assunção AG Jr, Martins RA, d’Assunção AG, et al. Simulation and measurement of inset‐fed microstrip patch antennas on BiNbO4 substrates. Microw Opt Technol Lett. 2010;52(5):1034-6.	-11.4 (2.64GHz)	-	100	-	BiNbO₄(V₂O₅)	47,8
Sales et al.¹²12 Sales AJM, Oliveira PWS, Almeida JS, Costa MM, Rodrigues HO, Sombra ASB. Copper concentration effect in the dielectric properties of BiNbO4 for RF applications. J Alloys Compd. 2012;542:264-70.	-40 (12.5GHz)	4.4	200	-	BiNbO₄	47
Liu et al.¹⁹19 Liu Y, Hao Y, Wang H, Li K, Gong S. Low RCS microstrip patch antenna using frequency-selective surface and microstrip resonator. IEEE Antennas Wirel Propag Lett. 2015;14:1290-3.	-22(5GHz)	-	280	FSS	FR4	4.4
Kulkarni and Sharma²⁰20 Kulkarni AN, Sharma SK. Frequency reconfigurable microstrip loop antenna covering LTE bands with MIMO implementation and wideband microstrip slot antenna all for portable wireless DTV media player. IEEE Trans Antenn Propag. 2013;61(2):964-8.	-24 and -32(1.8 – 2.6GHz)	3 and 5	100 - 80	-	FR4	4.4
Proposed (SiO₂)	-24.7 (3.51GHz)	7.7	100	EBG	SiO₂	4
Proposed (BiNbO₄)	-20 (3.5GHz)	3.6	80	EBG	BiNbO₄(V₂O₅)	47.4

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