This work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles.
modelling; emitter optimization; efficiency limits
