Effect of Electron-Plasma Treatment on the Microstructure of Al-11wt%Si Alloy

The analysis of structure, defect substructure, elemental and phase compounds and friction properties of Al-11wt%Si alloy surface layer of subjected to complex treatment was carried out by methods of scanning and transmission electron microscopy. Complex treatment includes the electroexplosion influence by Al-Y₂O₃ compound and subsequent electron beam irradiation. The surface layer ≈ 80 μm thick is formed by high-velocity crystallization cells of 0.8-1.3 μm in dimension. Interlayers 50–75 nm thick located along the cells of high-velocity crystallization are enriched by atoms of silicon and yttrium. Complex surface treatment leads to the increase by 18 times in wear resistance and decrease by 1.6 times in the friction factor of the modified layer.

Keywords:
Al-11wt%Si alloy; pulsed electron beam treatment; electroexplosive treatment; structure; tribological properties

Authorship

Dmitrii Zaguliaev

Wenzhou University Institute of Laser and Optoelectronic Intelligent Manufacturing, 325024, Wenzhou, ChinaWenzhou University Institute of Laser and Optoelectronic Intelligent ManufacturingChinaWenzhou, ChinaWenzhou University Institute of Laser and Optoelectronic Intelligent Manufacturing, 325024, Wenzhou, China

Siberian State Industrial University, 654007, Novokuznetsk, RussiaSiberian State Industrial UniversityRussiaNovokuznetsk, RussiaSiberian State Industrial University, 654007, Novokuznetsk, Russia

Yurii Ivanov

Institute of High Current Electronics of the Siberian Branch of the RAS, 634055 Tomsk, RussiaInstitute of High Current Electronics of the Siberian Branch of the RASRussiaTomsk, RussiaInstitute of High Current Electronics of the Siberian Branch of the RAS, 634055 Tomsk, Russia

Sergey Konovalov ^**e-mail: ksv@ssau.ru, ksv@wzu.edu.cn

Samara National Research University, 443086 Samara, RussiaSamara National Research UniversityRussiaSamara, RussiaSamara National Research University, 443086 Samara, Russia

https://orcid.org/0000-0003-4809-8660

Anna Abaturova

Siberian State Industrial University, 654007, Novokuznetsk, RussiaSiberian State Industrial UniversityRussiaNovokuznetsk, RussiaSiberian State Industrial University, 654007, Novokuznetsk, Russia

Victor Gromov

Siberian State Industrial University, 654007, Novokuznetsk, RussiaSiberian State Industrial UniversityRussiaNovokuznetsk, RussiaSiberian State Industrial University, 654007, Novokuznetsk, Russia

Yulia Rubannikova

Siberian State Industrial University, 654007, Novokuznetsk, RussiaSiberian State Industrial UniversityRussiaNovokuznetsk, RussiaSiberian State Industrial University, 654007, Novokuznetsk, Russia

Alexander Semin

Siberian State Industrial University, 654007, Novokuznetsk, RussiaSiberian State Industrial UniversityRussiaNovokuznetsk, RussiaSiberian State Industrial University, 654007, Novokuznetsk, Russia

*e-mail: ksv@ssau.ru, ksv@wzu.edu.cn

SCIMAGO INSTITUTIONS RANKINGS

Siberian State Industrial University, 654007, Novokuznetsk, RussiaSiberian State Industrial UniversityRussiaNovokuznetsk, RussiaSiberian State Industrial University, 654007, Novokuznetsk, Russia

Samara National Research University, 443086 Samara, RussiaSamara National Research UniversityRussiaSamara, RussiaSamara National Research University, 443086 Samara, Russia

Figures | Tables

Figures (7)
Tables (2)

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Figure 1
Structure of Al-11wt%Si alloy subjected to electroexplosion alloying and subsequent irradiation by pulsed electron beam; a, b – structure of irradiation surface; c – structure of transverse etched metallographic section. In (a) the dark arrows designate the films, the light arrows – the microdroplets located on the surface of the sample; in (c) – modified layer. Scanning electron microscopy.

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Figure 2
Structure of Al-11wt%Si alloy subjected to complex modification: a – d – layers located at distances of 20 μm; 40 μm, 65 μm, 80 μm from the surface of treatment, respectively.

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Figure 3
Bright-field electron microscopic image of structure of surface layer of modified Al-11wt%Si alloy (a); c-e – images of the given layer formed in the characteristic X-ray radiation of silicon atoms (c), yttrium (d) and titanium (e); the image (b) is formed by superimposing of images (c-e) on (a).

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Figure 4
Dependence of concentration of Al-11wt%Si alloy chemical elements (excluding aluminium) subjected to complex treatment on distance (X) from the surface of modification.

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Figure 5
Electron microscopic image of Al-11wt%Si alloy’s surface layer structure subjected to electroexplosion alloying and subsequent irradiation by pulsed electron beam; a - bright fields and b - bright fields with SAED; c - selected area electron diffraction (the arrow designates the reflection of dark field formation); d - dark field formed in reflection [211] of Si.

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Figure 6
Electron microscopic image of cellular crystallization structure of Al-11wt%Si alloy’s surface layer subjected to electroexplosion alloying and subsequent irradiation by intense pulsed electron beam; a– bright field; b - selected area electron diffraction (the arrows designate the reflections of dark field formation: 1 - c, 2 - d; c, d - dark fields formed in reflections [111] Al (c) and [111] Si (d), respectively.

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Figure 7
Electron microscopic image of Al-11wt%Si alloy’s surface layer structure subjected to electroexplosion alloying and subsequent irradiation by pulsed electron beam; a - bright fields and b - bright fields with SAED; c - selected area electron diffraction (the arrow designates the reflection of dark field formation); d - dark field formed in reflections [104] α-Ti (d).

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Table 1
Chemical composition (weight. %) of Al-11wt%Si alloy determined by X-ray microanalysis method.

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Table 2
Chemical composition of Al-11wt%Si alloy subjected to complex treatment combining the electroexplosion alloying and the subsequent irradiation by pulsed electron beam.

Figure 1 Structure of Al-11wt%Si alloy subjected to electroexplosion alloying and subsequent irradiation by pulsed electron beam; a, b – structure of irradiation surface; c – structure of transverse etched metallographic section. In (a) the dark arrows designate the films, the light arrows – the microdroplets located on the surface of the sample; in (c) – modified layer. Scanning electron microscopy.

Figure 2 Structure of Al-11wt%Si alloy subjected to complex modification: a – d – layers located at distances of 20 μm; 40 μm, 65 μm, 80 μm from the surface of treatment, respectively.

Figure 3 Bright-field electron microscopic image of structure of surface layer of modified Al-11wt%Si alloy (a); c-e – images of the given layer formed in the characteristic X-ray radiation of silicon atoms (c), yttrium (d) and titanium (e); the image (b) is formed by superimposing of images (c-e) on (a).

Figure 4 Dependence of concentration of Al-11wt%Si alloy chemical elements (excluding aluminium) subjected to complex treatment on distance (X) from the surface of modification.

Figure 5 Electron microscopic image of Al-11wt%Si alloy’s surface layer structure subjected to electroexplosion alloying and subsequent irradiation by pulsed electron beam; a - bright fields and b - bright fields with SAED; c - selected area electron diffraction (the arrow designates the reflection of dark field formation); d - dark field formed in reflection [211] of Si.

Figure 6 Electron microscopic image of cellular crystallization structure of Al-11wt%Si alloy’s surface layer subjected to electroexplosion alloying and subsequent irradiation by intense pulsed electron beam; a– bright field; b - selected area electron diffraction (the arrows designate the reflections of dark field formation: 1 - c, 2 - d; c, d - dark fields formed in reflections [111] Al (c) and [111] Si (d), respectively.

Figure 7 Electron microscopic image of Al-11wt%Si alloy’s surface layer structure subjected to electroexplosion alloying and subsequent irradiation by pulsed electron beam; a - bright fields and b - bright fields with SAED; c - selected area electron diffraction (the arrow designates the reflection of dark field formation); d - dark field formed in reflections [104] α-Ti (d).

Table 1 Chemical composition (weight. %) of Al-11wt%Si alloy determined by X-ray microanalysis method.

Al	Si	Cu	Mg	Ni	Fe	Cr	Mn	Ti
84.88	11.10	2.19	0.58	0.92	0.25	0.01	0.02	0.05

Table 2 Chemical composition of Al-11wt%Si alloy subjected to complex treatment combining the electroexplosion alloying and the subsequent irradiation by pulsed electron beam.

Element	keV	Mass, %	Counts	Error, %	Atom, %
O	0.525	2.30	10875.08	0.11	4.17
Mg	1.253	1.13	9213.72	0.20	1.35
Al (Ref.)	2.486	75.76	626449.69	0.00	81.60
Si	1.739	5.01	43060.93	0.05	5.18
Ti	4.508	5.14	33403.07	0.06	3.12
Fe	6.398	2.49	13508.27	0.16	1.30
Ni	7.471	1.07	5163.90	0.48	0.53
Cu	8.040	3.33	14151.06	0.19	1.52
Y	1.922	3.78	8101.01	0.34	1.23
Total		100			100

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[1] *e-mail: ksv@ssau.ru, ksv@wzu.edu.cn