Electrical characteristics of thin films of aluminum oxide prepared by spray pyrolysis were studied. The films were prepared from solution onto single crystal GaAs (100) substrates at temperatures from 300°C to 600°C. The electrical characteristics of these films as a function of the substrate temperature were determined from the capacitance and current versus voltage measurements of metal-oxide-semiconductor (MOS) structures incorporating them. The interface states density was of the order of 10(12) 1/eV-cm² and the films can stand electric fields higher than 5MV/cm, without observing destructive dielectric breakdown. The refractive index at 633 nm near to 1.64 was measured by ellipsometry.
MOS structures; field effect transistor (FET); dielectric materials; electrical properties and interfaces
